双击此处添加文字

加入购物车

BMBP2R3/R6-6DC

产品详情

Features

●High precision film processing technology

●High performance, low temperature drift, high power

●Ceramic substrate, 50Ω output with coplanar waveguide

●Gold wire bonding, suitable for multi-chip integrated module applications

 

Environmental parameters

Operating temperature

-55℃~ 85℃

Storage temperature

-55℃~ 125℃

Max input power

35dBm

Electrical characteristics (TA= 25℃)

Indicators

Min

Typical

Max

Unit

Center frequency (f0)

-

2.3

-

GHz

Pass-Band frequency

2.02

-

2.6

GHz

Fluctuation in the band

-

-

1

dB

Center insertion loss

-

1.5

-

dB

Return loss

-

16

-

dB

Out band attenuation

≥40@1.4GHz


≥40@2.92GHz



 

 


上一篇 6CBBP46U20-S5 下一篇 GaLP12